Title :
Molecular-beam epitaxial growth of pyramidal structures on patterned GaAs [100] substrates for three-dimensionally confined structures
Author :
Lopez, Miguel ; Ishikawa, Takaaki ; Nomura, Yutaka
Author_Institution :
Optoelectron. Technol. Res. Lab., Ibaraki, Japan
Abstract :
The growth by molecular-beam epitaxy of pyramidal structures on GaAs[100] patterned substrates is described. Pyramidal structures defined by four [110] facets were realised by the growth of GaAs on square mesas with sides along the [010] and [001] directions. These structures can be used for the fabrication of three-dimensionally confined structures.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; scanning electron microscope examination of materials; semiconductor growth; semiconductor quantum dots; GaAs; MBE growth; SEM photographs; molecular-beam epitaxy; patterned GaAs[100] substrates; pyramidal structures; quantum dots; square mesas; three-dimensionally confined structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931494
