• DocumentCode
    989923
  • Title

    Novel vertical GaAs FET structure with submicrometre source-to-drain spacing

  • Author

    Kohn, Erhard ; Magarshack, J. ; Mishra, Umesh ; Eastman, L.F.

  • Author_Institution
    Thomson-CSF, Orsay, France
  • Volume
    19
  • Issue
    24
  • fYear
    1983
  • Firstpage
    1021
  • Lastpage
    1023
  • Abstract
    As a feasibility study for sub 1/2 ¿m source-to-drain spaced FETs, a vertical 1/2 ¿ m GaAs FET structure has been fabricated incorporating a novel lossy insulator (MIS) gate contact. First device characteristics are presented.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; MIS contact; lossy insulator gate contact; submicron source to drain spacing; vertical GaAs FET structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830692
  • Filename
    4248241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989923