DocumentCode
989931
Title
Multi-terahertz sidewall-etched varactor diodes and their application in submillimetre-wave sampling circuits
Author
Allen, Scott T. ; Bhattacharya, Ujjwal ; Rodwell, Mark J. W.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
29
Issue
25
fYear
1993
Firstpage
2227
Lastpage
2228
Abstract
Schottky varactor diodes with 4THz cutoff frequencies were fabricated using 1 mu m lithography and selfaligned RIE sidewall etching. These diodes were incorporated into nonlinear transmission line pulse generators that produced 3V steps with 0.68ps 10-90% fall time. The lines were measured with integrated sampling circuits that had 515GHz bandwidth.
Keywords
MMIC; Schottky-barrier diodes; pulse generators; sample and hold circuits; solid-state microwave devices; sputter etching; submillimetre wave devices; varactors; 0.68 ps; 1 mu m lithography; 12 V; 4 THz; 515 GHz; GaAs; Schottky varactor diodes; Y parameters; bandwidth samplers; cutoff frequencies; integrated sampling circuits; multi-terahertz varactor diodes; nonlinear transmission line pulse generators; selfaligned RIE sidewall etching; submillimetre-wave sampling circuits; subpicosecond shock wave generators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931495
Filename
250370
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