Title :
GaAs FET power amplifier module with high efficiency
Author :
Chiba, K. ; Kanmuri, N.
Author_Institution :
NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan
Abstract :
A high-efficiency GaAs FET power amplifier having a total efficiency of 70% and an output power of 2 W is realised in the 900 MHz band. A drain efficiency of 80% was achieved at a low operation voltage of 6 V. These high efficiencies were obtained by using the even-order harmonic tuning of an output matching circuit. Important parameters for achieving this efficiency are also clarified.
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; power amplifiers; solid-state microwave circuits; 2 W output power; 900 MHz band; GaAs FET power amplifier module; drain efficiency; even-order harmonic tuning; high efficiency; microwave amplifier; output matching circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830694
