DocumentCode
990002
Title
In0.53Ga0.47As liquid phase epitaxy on (100)-InP substrates at low growth temperatures
Author
Eisele, H. ; K¿¿rber, W. ; Benz, K.W.
Author_Institution
Universitÿt Stuttgart, Physikalisches Institut, Kristallabor, Stuttgart, West Germany
Volume
19
Issue
24
fYear
1983
Firstpage
1035
Lastpage
1036
Abstract
In0.53Ga0.47As epitaxial layers of high quality and excellent surface morphology have been grown in an automated LPE system. The growth temperature was varied between 500 and 63O°C. Room-temperature Hall measurements indicated a net carrier concentration of n = 8 × 1014 cm¿3 and mobility values of ¿ = 13000 cm2V¿1 s¿1 at TG 617°C and n = 7.7 × 1015 cm¿3 and ¿ = 9800 cm2 V¿1 s¿1 at TG = 517°C, respectively.
Keywords
Hall effect; III-V semiconductors; carrier density; carrier mobility; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; Hall measurements; In0.53Ga0.47As; InP substrates; automated LPE system; carrier concentration; epitaxial layers; liquid phase epitaxy; low growth temperatures; mobility; semiconductor growth; surface morphology;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830702
Filename
4248252
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