Title :
Hydrogenation of electron traps in bulk GaAs and GaP
Author :
Pearton, S.J. ; Haller, Eugene E. ; Elliott, A.G.
Author_Institution :
University of California, Lawrence Berkeley Laboratory, Berkeley, USA
Abstract :
The effect of hydrogenation on a variety of electrically active defects in bulk single-crystal GaAs and GaP has been observed using transient capacitance spectroscopy. Approximately half the different defect states in these materials were neutralised by hydrogen incorporation. The efficiency of neutralisation was slightly more pronounced for defects in GaAs compared to those in GaP.
Keywords :
III-V semiconductors; electron traps; gallium arsenide; gallium compounds; GaAs; GaP; effect of hydrogenation; electrically active defects; electron traps; semiconductor; transient capacitance spectroscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830714
