Title :
Low-pressure MOVPE growth of Sn-doped GaAs
Author :
Roth, A.P. ; Yakimova, R. ; Sundaram, V.S.
Author_Institution :
National Research Council, Semiconductor Research Group Division of Chemistry, Ottawa, Canada
Abstract :
Sn-doped GaAs layers have been grown by low pressure MOVPE. For carrier concentrations n ¿ 1.5 × 1019 cm¿3, the layers are characterised by good surface morphology, high mobility and negligible compensation. At higher carrier concentration, the surface morphology deteriorates and Sn surface accumulation is detected by AES.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; semiconductor doping; semiconductor growth; tin; vapour phase epitaxial growth; AES; GaAs:Sn; MOVPE growth; Sn surface accumulation; carrier concentrations; high mobility; low pressure metalorganic vapour phase epitaxy; semiconductor growth; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830721
