• DocumentCode
    990620
  • Title

    Linewidth enhancement factor for quantum-well lasers

  • Author

    Burt, M.G.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    20
  • Issue
    1
  • fYear
    1984
  • Firstpage
    27
  • Lastpage
    29
  • Abstract
    The linewidth enhancement factor ¿ is calculated for an idealised GaInAs quantum-well laser. Values between 1 and 2 are found for a range of possible lasing energies. Somewhat larger values are expected for GaInAs quantum wells with InP barriers. It is concluded that dramatic reductions in ¿ are not to be expected for quantum wells.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAs quantum-well laser; III-V semiconductors; InP barriers; lasing energies; linewidth enhancement factor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840020
  • Filename
    4248574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990620