• DocumentCode
    990630
  • Title

    Am quantum noise in 1.3 μm InGaAsP lasers

  • Author

    Mukai, T. ; Yamamoto, Y.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    20
  • Issue
    1
  • fYear
    1984
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    Intensity fluctuations for two types of 1.3 μm InGaAsP laser are measured and calculated based on device structural and material parameters and are found to be in good agreement with the quantum-noise-limited level.
  • Keywords
    III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 micron wavelength; AM quantum noise; III-V semiconductors; InGaAsP laser; material parameters; structural parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840021
  • Filename
    4248575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990630