Title :
As/sup +/-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
Author :
Li-Hong Laih ; Kuo, H.C. ; Lin, Gong-Ru ; Laih, Lih-Wen ; Wang, S.C.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2004 12:00:00 AM
Abstract :
We report the utilization of an As/sup +/-implanted AlGaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As/sup +/-implanted device showed a four-fold increase over the nonimplanted one at the As/sup +/ dosage of 1/spl times/10/sup 16/ cm/sup -3/ and the oxidation temperature of 400/spl deg/C. 50 side-by-side As/sup +/-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of /spl Delta/I/sub th//spl sim/0.2 mA and slope-efficiency of /spl Delta/S.E./spl sim/3%.
Keywords :
III-V semiconductors; aluminium compounds; arsenic; gallium arsenide; ion implantation; laser cavity resonators; oxidation; semiconductor lasers; surface emitting lasers; 400 degC; 850 nm; AlGaAs:As; As/sup +/-implanted AlGaAs; oxide-confined VCSEL; regrowth method; vertical cavity surface-emitting laser; wet thermal oxidation; Acceleration; Apertures; Buffer layers; Gallium arsenide; Optical arrays; Oxidation; Semiconductor laser arrays; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.827116
