CW technique for measurement of linewidth enhancement factor: application to 735-nm tensile-strained GaAsP quantum-well lasers

Author

Rodríguez, D. ; Borruel, L. ; Esquivias, I. ; Wenzel, H. ; Sumpf, B. ; Erbert, G.

Author_Institution

Dept. de Tecnologia Fotonica, Univ. Politecnica de Madrid, Spain

Volume

16

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

1432

Lastpage

1434

Abstract

We present a procedure for determining the linewidth enhancement factor (α parameter) in semiconductor lasers under continuous-wave (CW) operation. It is based on the measurement of the amplified spontaneous emission spectra, with a proper correction of thermal effects. The method is applied to 735-nm tensile strained GaAsP-AlGaAs quantum-well lasers and it is validated by comparing CW results, after correcting thermal effects, with pulsed measurements. The results show a low value of the α parameter attributed to the tensile strain.

Keywords

III-V semiconductors; gallium compounds; laser variables measurement; quantum well lasers; spectral line breadth; superradiance; 735 nm; GaAsP-AlGaAs; amplified spontaneous emission spectra; continuous-wave operation; linewidth enhancement factor; pulsed measurements; quantum-well lasers; semiconductor lasers; tensile-strained lasers; thermal effects; Charge carrier density; Measurement techniques; Pulse amplifiers; Pulse measurements; Pump lasers; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Temperature; Thermal resistance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.826761

Filename

1300622