Title :
Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells
Author :
Lin, Ching-Fuh ; Su, Yi-Shin ; Wu, Chao-Hsin ; Shmavonyan, Gagik S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taiwan
fDate :
6/1/2004 12:00:00 AM
Abstract :
Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of superluminescent diodes (SLDs)/semiconductor optical amplifiers (SOAs). Reducing the thickness of SCH layer at the p-side could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). With three In0.67Ga0.33As0.72P0.28 QWs near the p-side and two In0.53Ga0.47As QWs near the n-side, when the thickness of the SCH layer changes from 120 to 30 nm, the operation current for SLDs/SOAs to exhibit the full-width at half-maximum spectral width of above 270 nm could be reduced from 500 to 160 mA.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; p-n heterojunctions; semiconductor optical amplifiers; semiconductor quantum wells; superluminescent diodes; 160 mA; 30 to 120 nm; 500 mA; In0.53Ga0.47As; InGaAsP; SOA; carrier distribution; carrier transport; emission bandwidth; full-width at half-maximum; multiple quantum wells; semiconductor optical amplifiers; separate confinement heterostructure; superluminescent diodes; Bandwidth; Carrier confinement; Chaotic communication; Helium; Indium phosphide; Optical fiber communication; Optical fibers; Quantum well devices; Semiconductor optical amplifiers; Superluminescent diodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.827119
