• DocumentCode
    990718
  • Title

    Photoexcited In0.53Ga0.47As/Inp quantum-well lasers with high characteristic temperatures

  • Author

    Kodama, Kazuya ; Komeno, J. ; Ozeki, Motoyuki

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    20
  • Issue
    1
  • fYear
    1984
  • Firstpage
    42
  • Lastpage
    44
  • Abstract
    We report the temperature dependence of the threshold excitation power of photopumped In0.53Ga0.47As/Inp quantum-well structures. We have observed that the quantum-well active layer results in an increase of the characteristic temperature T0.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; III-V semiconductors; In0.53Ga0.47As/InP; active layer; characteristic temperature increase; p-n heterojunctions; photoexcitation; quantum-well structures; semiconductor junction lasers; temperature dependence; threshold excitation power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840030
  • Filename
    4248586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990718