DocumentCode
990740
Title
Transistor effects and in situ STM of redox molecules at room temperature
Author
Albrecht, Tim ; Guckian, Adrian ; Ulstrup, Jens ; Vos, Johannes G.
Author_Institution
Dept. of Chem., Tech. Univ. of Denmark, Lyngby, Denmark
Volume
4
Issue
4
fYear
2005
fDate
7/1/2005 12:00:00 AM
Firstpage
430
Lastpage
434
Abstract
Inorganic transition metal complexes were identified as potential candidates for transistor-like behavior in an electrochemical scanning tunnelling microscope (STM) configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory. It predicts a distinct increase of the tunnelling current close to the equilibrium potential, i.e., if molecular bridge states are tuned into resonance with the Fermi levels of the enclosing electrodes. The complexes display robust electrochemistry on Au(111) electrode surfaces. STM images at molecular resolution reveal detailed information on their surface structure and scanning tunnelling spectroscopy experiments have shown clear evidence of transistor-like behavior.
Keywords
Fermi level; charge exchange; electrochemistry; electrodes; gold; molecular electronics; resonant tunnelling; resonant tunnelling transistors; scanning tunnelling microscopy; scanning tunnelling spectroscopy; surface structure; 293 to 298 K; Au; Au(111) electrode surfaces; Fermi levels; STM images; charge transfer theory; electrochemical scanning tunnelling microscope configuration; electrochemistry; equilibrium potential; inorganic transition metal complexes; molecular bridge states; molecular electronics; molecular resolution; potential candidates; redox molecules; resonant tunneling transistors; room temperature; scanning tunnelling spectroscopy; surface structure; transistor effects; transistor-like behavior; tunnelling current; Bridges; Charge transfer; Displays; Electrodes; Image resolution; Microscopy; Resonance; Robustness; Temperature; Tunneling; Charge transfer; conductivity; molecular electronics; resonant tunneling transistors; transition metal compounds;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2005.851280
Filename
1461391
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