• DocumentCode
    990740
  • Title

    Transistor effects and in situ STM of redox molecules at room temperature

  • Author

    Albrecht, Tim ; Guckian, Adrian ; Ulstrup, Jens ; Vos, Johannes G.

  • Author_Institution
    Dept. of Chem., Tech. Univ. of Denmark, Lyngby, Denmark
  • Volume
    4
  • Issue
    4
  • fYear
    2005
  • fDate
    7/1/2005 12:00:00 AM
  • Firstpage
    430
  • Lastpage
    434
  • Abstract
    Inorganic transition metal complexes were identified as potential candidates for transistor-like behavior in an electrochemical scanning tunnelling microscope (STM) configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory. It predicts a distinct increase of the tunnelling current close to the equilibrium potential, i.e., if molecular bridge states are tuned into resonance with the Fermi levels of the enclosing electrodes. The complexes display robust electrochemistry on Au(111) electrode surfaces. STM images at molecular resolution reveal detailed information on their surface structure and scanning tunnelling spectroscopy experiments have shown clear evidence of transistor-like behavior.
  • Keywords
    Fermi level; charge exchange; electrochemistry; electrodes; gold; molecular electronics; resonant tunnelling; resonant tunnelling transistors; scanning tunnelling microscopy; scanning tunnelling spectroscopy; surface structure; 293 to 298 K; Au; Au(111) electrode surfaces; Fermi levels; STM images; charge transfer theory; electrochemical scanning tunnelling microscope configuration; electrochemistry; equilibrium potential; inorganic transition metal complexes; molecular bridge states; molecular electronics; molecular resolution; potential candidates; redox molecules; resonant tunneling transistors; room temperature; scanning tunnelling spectroscopy; surface structure; transistor effects; transistor-like behavior; tunnelling current; Bridges; Charge transfer; Displays; Electrodes; Image resolution; Microscopy; Resonance; Robustness; Temperature; Tunneling; Charge transfer; conductivity; molecular electronics; resonant tunneling transistors; transition metal compounds;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2005.851280
  • Filename
    1461391