• DocumentCode
    990744
  • Title

    High-transconductance self aligned GaAs MESFET using implantation through an AlN layer

  • Author

    Onodera, Hidetoshi ; Yokoyama, Naoki ; Kawata, Hirotaka ; Nishi, Hidetaka ; Shibatomi, A.

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    20
  • Issue
    1
  • fYear
    1984
  • Firstpage
    45
  • Lastpage
    47
  • Abstract
    Tungsten-silicide-gate self aligned GaAs MESFETs were fabricated on a very thin channel layer formed by implantation through an AlN layer on a semi-insulating GaAs substrate. Transconductance of the through-implanted MESFETs showed a 30 to 50% increase as compared with that of conventional self aligned MESFETs, and reached its maximum value at 300 mS/mm for 1¿m-gate-length FETs.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor doping; AlN layer; GaAs MESFET; III-V semiconductors; WSi2 gate; channel layer; self aligned structure; semiconductor doping; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840032
  • Filename
    4248589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990744