Title :
High-transconductance self aligned GaAs MESFET using implantation through an AlN layer
Author :
Onodera, Hidetoshi ; Yokoyama, Naoki ; Kawata, Hirotaka ; Nishi, Hidetaka ; Shibatomi, A.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Tungsten-silicide-gate self aligned GaAs MESFETs were fabricated on a very thin channel layer formed by implantation through an AlN layer on a semi-insulating GaAs substrate. Transconductance of the through-implanted MESFETs showed a 30 to 50% increase as compared with that of conventional self aligned MESFETs, and reached its maximum value at 300 mS/mm for 1¿m-gate-length FETs.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor doping; AlN layer; GaAs MESFET; III-V semiconductors; WSi2 gate; channel layer; self aligned structure; semiconductor doping; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840032
