• DocumentCode
    990887
  • Title

    Threshold current characteristics of GaAs lasers under short pulse excitation

  • Author

    Olsson, N.A. ; Dutta, N.K. ; Tsang, W.T. ; Logan, R.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    20
  • Issue
    2
  • fYear
    1984
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    Measurements of the temperature dependence of threshold current using both short pulse and CW excitation of GaAs heterostructure lasers with multiquantum well and conventional active layers are presented. Our results show that the carrier density at threshold is weakly temperature-dependent in both types of lasers. This is consistent with the measured carrier lifetime at threshold.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; semiconductor junction lasers; CW excitation; GaAs heterostructure lasers; III-V semiconductors; active layers; carrier density; carrier lifetime; multiquantum well; semiconductor junction lasers; short pulse excitation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840044
  • Filename
    4248605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990887