Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications

Author

Thijs, Steven ; Trémouilles, David ; Russ, Christian ; Griffoni, Alessio ; Collaert, Nadine ; Rooyackers, Rita ; Linten, Dimitri ; Scholz, Mirko ; Duvvury, Charvaka ; Gossner, Harald ; Jurczak, Malgorzata ; Groeseneken, Guido

Author_Institution

Interuniv. Microelectron. Center, Leuven

Volume

55

Issue

12

fYear

2008

Firstpage

3507

Lastpage

3516

Abstract

Electrostatic discharge performance of advanced FinFETs shows a delicate sensitivity to device layout and to processing parameters. Both N- and P-type MOS FinFET devices are characterized in bipolar operation mode as a function of layout parameters such as gate length and fin width. The impact of well implants, selective epitaxial growth, and strain is studied.

Keywords

MOSFET; electrostatic discharge; nanoelectronics; semiconductor device reliability; semiconductor doping; semiconductor growth; ESD; N-type MOS FinFET device; P-type MOS FinFET device; bipolar operation mode; device layout; electrostatic discharge; fin width; gate length; selective epitaxial growth; strain impact; well implants; CMOS technology; Circuits; Electrostatic discharge; FinFETs; Instruments; MOSFETs; Microelectronics; Silicon on insulator technology; US Department of Transportation; Voltage; Electrostatic discharge (ESD); FinFET; human body model (HBM); silicon on insulator (SOI); transmission line pulse (TLP);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2006547

Filename

4675310