The characteristics of CMOS devices in oxygen-implanted silicon-on-insulator structures

Author

Mao, Bor-yen ; Sundaresan, Ravishankar ; Chen, C. E Daniel ; Matloubain, M. ; Pollack, Gordon

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

35

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

629

Lastpage

633

Abstract

The characteristics of CMOS devices fabricated in oxygen-implanted silicon-on-insulator (SOI) substrates with different oxygen doses are studied. The results show that transistor junction leakage currents are improved by orders of magnitude when the oxygen dose is decreased from 2.25×10¹⁸ cm^-2 to 1.4×10¹⁸ cm^-2 . The floating-body effect, i.e. transistor turn-on at lower gate voltage with dramatic improvement in subthreshold slope when the drain voltage is increased, is enhanced by the reduction in leakage current and hence the oxygen dose. In SOI substrates implanted with 1.4×10¹⁷ cm^-2 oxygen dose and annealed at 1150°C, back-channel mobilities are decreased by several orders of magnitude compared to the mobilities in the precipitate-free silicon film. These device characteristics are correlated with the microstructure at the silicon-buried-oxide interface, which is controlled by oxygen implantation and post-oxygen-implantation anneal

Keywords

CMOS integrated circuits; elemental semiconductors; insulated gate field effect transistors; ion implantation; leakage currents; semiconductor-insulator boundaries; silicon; CMOS devices; SOI substrates; Si-SiO₂; Si:O⁺; back-channel mobilities; floating-body effect; ion implantation; microstructure; post-oxygen-implantation anneal; subthreshold slope; transistor junction leakage currents; transistor turn-on; Annealing; Implants; Instruments; Leakage current; Microstructure; Process design; Semiconductor films; Silicon on insulator technology; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2505

Filename

2505