• DocumentCode
    991068
  • Title

    Temperature effects on high-gain photoconductive detectors

  • Author

    Vilcot, J.P. ; Vaterkowski, J.L. ; Decoster, D. ; Constant, M.

  • Author_Institution
    Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
  • Volume
    20
  • Issue
    2
  • fYear
    1984
  • Firstpage
    86
  • Lastpage
    88
  • Abstract
    In the letter we report gain measurements on N-type GaAs planar photoresistors which have been performed against temperature, for various light powers. A strong dependence of gain on temperature has been shown and interpreted in terms of trapping effects.
  • Keywords
    III-V semiconductors; electric sensing devices; gallium arsenide; hole traps; photoconducting devices; photodetectors; photoresistors; GaAs; III-V semiconductors; electric sensing devices; gain measurements; hole traps; n-type; photoconductive detectors; planar photoresistors; temperature dependence; trapping effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840060
  • Filename
    4248624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=991068