• DocumentCode
    991140
  • Title

    Modelling of single- and dual-gate MESFET mixers

  • Author

    Meierer, R. ; Tsironis, Christos

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    20
  • Issue
    2
  • fYear
    1984
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    Computer modelling allowing the determination of matching circuitry and optimum bias conditions for maximum conversion gain and IF bandwidth of FET mixers is described. Theoretical results for single-gate and dual-gate FET mixers are presented. Good agreement with measurements on a 12 GHz DBS reception dual-gate FET mixer (8 dB conversion gain with 800 MHz bandwidth) is demonstrated.
  • Keywords
    Schottky gate field effect transistors; circuit CAD; mixers (circuits); semiconductor device models; solid-state microwave circuits; 12 GHz; CAD; DBS reception; IF bandwidth; MESFET; SHF; X-band; computer-aided design; direct broadcast satellite; dual-gate FET mixer; matching circuitry; maximum conversion gain; modelling; optimum bias conditions; single gate device; solid-state microwave circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840068
  • Filename
    4248633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=991140