DocumentCode :
991230
Title :
Large-signal capabilities and analysis of distributed amplifiers
Author :
Gamand, P. ; Crosnier, Y. ; Gelin, P.
Author_Institution :
Universitéde Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
Volume :
20
Issue :
8
fYear :
1984
Firstpage :
317
Lastpage :
319
Abstract :
In the letter experimental results are presented which show that distributed amplifiers can be used for power applications. These results are verified by comparing an analytic model predicted using SPICE 2 simulation with measurements between 0.3 and 12 GHz. It appears that a very broad band can be achieved and that the distributed amplifiers keep their self matching properties even under large-signal operation. Distributed-amplifier characteristics, under small-signal operations, are now well known.1¿4 However, recent improvements in GaAs FET technology have created new prospects in large-signal and high-frequency conditions. To our knowledge, although some experimental results have been published3, no theoretical study has been carried out for large-signal conditions. The letter provides such a study.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; distributed parameter networks; gallium arsenide; microwave amplifiers; nonlinear network analysis; power amplifiers; solid-state microwave circuits; 0.3 to 12 GHz measurements; GaAs; III-V semiconductors; MESFET; SHF; SPICE 2 simulation; UHF; analytic model; distributed amplifiers; high-frequency conditions; large-signal operation; nonlinear network analysis; power amplifiers; self matching properties; solid-state microwave circuits;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19840215
Filename :
4248645
Link To Document :
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