DocumentCode
991341
Title
60 GHz monolithic GaAs front-end circuit for receiver applications
Author
Barker, G.K. ; Badawi, M.H. ; Mun, Jungtae
Author_Institution
Standard Telecommunication Laboratories Ltd., Harlow, UK
Volume
20
Issue
8
fYear
1984
Firstpage
334
Lastpage
335
Abstract
A millimetre-wave planar mixer diode compatible with GaAs MESFET based integrated circuit fabrication has been developed. Selective ion implantation was used to optimise the diode and FET doping profiles. A novel feature reported here is the use of a deep implanted buried n+ layer to minimise diode series resistance, yielding diode cutoff frequencies in excess of 500 GHz. Monolithic balanced mixer diodes integrated with an MESFET IF amplifier fabricated by this technique have given 5dB conversion loss at 60 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; mixers (circuits); radio receivers; 500 GHz; 60 GHz; EHF; GaAs MESFET; IF amplifier; III-V semiconductors; MMIC; deep implanted buried n+ layer; diode cutoff frequencies; diode series resistance minimisation; doping profile optimisation; front-end circuit; millimetre-wave planar mixer diode; monolithic microwave IC; receiver applications; selective ion implantation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840226
Filename
4248658
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