DocumentCode
991401
Title
Erratum for "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region"
Author
Jin He
Volume
54
Issue
2
fYear
2007
Firstpage
372
Lastpage
372
Abstract
The author makes the following corrections to the original article (see ibid., vol.53, no.9, p.2008-16, Sept. 2006). Due to miscommunication, the author has included Mansun Chan, Xing Zhang, and Yangyuan Wang as coauthors without their full consent. Jin He should be the sole author of the paper and is responsible for all the contents. He apologizes to the other coauthors whose names should not be associated with the paper.
Keywords
MOSFET; semiconductor device models; surface potential; MOSFET; accumulation region; physics-based analytic solution; strong-inversion region; surface potential;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.890468
Filename
4067186
Link To Document