• DocumentCode
    991401
  • Title

    Erratum for "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region"

  • Author

    Jin He

  • Volume
    54
  • Issue
    2
  • fYear
    2007
  • Firstpage
    372
  • Lastpage
    372
  • Abstract
    The author makes the following corrections to the original article (see ibid., vol.53, no.9, p.2008-16, Sept. 2006). Due to miscommunication, the author has included Mansun Chan, Xing Zhang, and Yangyuan Wang as coauthors without their full consent. Jin He should be the sole author of the paper and is responsible for all the contents. He apologizes to the other coauthors whose names should not be associated with the paper.
  • Keywords
    MOSFET; semiconductor device models; surface potential; MOSFET; accumulation region; physics-based analytic solution; strong-inversion region; surface potential;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.890468
  • Filename
    4067186