Author :
Krawczyk, S. ; Bailly, B. ; Sautreuil, Bernard ; Blanchet, R. ; Viktorovitch, P.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; monitoring; photoluminescence; semiconductor device manufacture; III-V semiconductor; InP MIS devices; MIS devices; MISFET; fabrication; n-type InP; photoluminescence measurements; production monitoring; surface state density;
