Title :
Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy
Author :
Suzuki, Kunihiro ; Kataoka, Yuji ; Nagayama, Susumu ; Magee, Charles W. ; Büyüklimanli, Temel H. ; Nagayama, Tsutomu
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
Abstract :
We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data revealed that the As concentration changes only near the moving amorphous/crystal interface. We derived an analytical model for the redistribution profiles using a segregation coefficient m between amorphous and crystalline Si, introduced a parameter of reaction length l that is the distance where impurities were exchanged, and obtained good agreement with experimental data with an m value of 3 and an l value of 1 nm for As. Furthermore, we applied our model to P and B redistribution profiles and obtained good agreement with corresponding m value of 4 and l value of 1 nm for P and m value of 0.3 and l value of 1 nm for B
Keywords :
Rutherford backscattering; arsenic; boron; impurities; ion implantation; phosphorus; solid phase epitaxial growth; Rutherford backscattering spectrometry; ion implantation; ion-implanted impurities; redistribution profile; segregation coefficient; solid-phase epitaxy; Amorphous materials; Analytical models; Backscatter; Crystallization; Epitaxial growth; Equations; Impurities; Ion implantation; Rapid thermal annealing; Spectroscopy; Arsenic; boron; ion implantation; phosphorous; pileup; solid-phase epitaxy (SPE);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.888676
