DocumentCode
991637
Title
Characteristics of RF-sputtered CoCr films
Author
Wielinga, T. ; Lodder, J.C. ; Worst, J.
Author_Institution
Twente University of Technology, Enschede, The Netherlands
Volume
18
Issue
6
fYear
1982
fDate
11/1/1982 12:00:00 AM
Firstpage
1107
Lastpage
1109
Abstract
The magnetization of the CoCr recording medium has been investigated by several methods. First the perpendicular hysteresis loops are analysed in the thickness range from 500 to 20,000 Å. This provided evidence that the magnetization process is typefied by domain wall motion. Second the dependence of the coercivity on the film thickness has been determined. The dependence found can be explained if it is assumed, that the coercivity is caused by domain walls, impeded by the crystallite boundaries. Finally stand-still recording experiments have been performed, which confirm that magnetization takes place by the displacement of domain walls. The switching criterion in the writing process is best met by taking the field averaged over the film thickness.
Keywords
Magnetic films/devices; Sputtering; Anisotropic magnetoresistance; Coercive force; Crystallization; Magnetic domain walls; Magnetic films; Magnetic hysteresis; Magnetic properties; Magnetization; Perpendicular magnetic recording; Semiconductor films;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1982.1062152
Filename
1062152
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