Title :
Transient annealing of modulation-doped GaAs/AlxGa1-xAs heterostructures
Author :
Henderson, Tim ; Pearah, P. ; Morko¿¿, H. ; Nilsson, B.
Author_Institution :
University of Illinois at Urbana-Champaign, Department of Electrical Engineering and Coordinated Science Laboratory, Urbana, USA
Abstract :
The effects of transient annealing on modulation-doped heterostructures at temperatures between 750 and 900°C have been studied for eventual application to self aligned ion-implanted FETs. Transient annealing at 800°C, the minimum temperature necessary for sufficient ion implant activation, decreases mobility and interface electron density (- 10i2 cm-2) by <5+ and <2+, respectively. This should permit high-speed device application far exceeding the current state-of-the-art.
Keywords :
III-V semiconductors; aluminium compounds; annealing; field effect transistors; gallium arsenide; p-n heterojunctions; III-V semiconductors; high-speed device application; interface electron density; ion implant activation; mobility; modulation-doped GaAs/AlxGa1-xAs heterostructures; self aligned ion-implanted FETs; transient annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840256
