Title :
Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE
Author :
Wakao, K. ; Nishi, Hidetaka ; Isozumi, S. ; Ohsaka, S. ; Kusunoki, Takashi ; Ushijima, I.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
InGaAsP/InGaP double-heterostructure lasers emitting at 810 nm have been fabricated on GaAs substrates using liquid-phase epitaxy (LPE). A threshold current as low as 2.0 kA/cm2 with an external differential quantum efficiency of 54% is obtained. Thus it has been shown that high-quality InGaAsP/InGaP lasers can be obtained by LPE growth.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; III-V semiconductors; InGaAsP/InGaP double-heterostructure lasers; LPE; external differential quantum efficiency; liquid-phase epitaxy; semiconductor junction lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840258
