Title :
Growth of CuInS2 single crystals by THM
Author :
Hsu, H.J. ; Sun, C.Y. ; Hwang, H.L.
Author_Institution :
National Tsing Hua University, Department of Electrical Engineering, Hsin-Chu, Republic of China
Abstract :
The letter describes the use of THM in the growth of CuInS2 single crystals. This work demonstrates the feasibility of growing large single crystals of certain I-III-VI2 compounds.
Keywords :
copper compounds; crystal growth from solution; indium compounds; semiconductor growth; ternary semiconductors; CuInS2; I-III-VI2 compounds; large single crystals; semiconductor growth; ternary semiconductors; travelling heater method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840259
