Title :
InP mixer diodes with etched via ohmic contacts
Author :
Christou, A. ; Davey, J.E. ; Tseng, W.F. ; Bark, M.L.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
InP mixer diodes processed with Ag/TiW/Au Schottky diodes have exhibited a noise figure of 6.5¿7.0 dB at 94 GHz. InP surface preparation is shown to be critical in diode performance. An indium-stabilised surface has resulted in a barrier height of 0.45 eV.
Keywords :
III-V semiconductors; Schottky-barrier diodes; indium compounds; mixers (circuits); solid-state microwave devices; Ag/TiW/Au Schottky diodes; III-V semiconductors; InP mixer diodes; barrier height; diode performance; etched via ohmic contacts; noise figure; surface preparation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840261
