Title :
Fabrication of GaAlAs ´window-stripe´ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying
Author :
Suzuki, Yuya ; Horikoshi, Y. ; Kobayashi, Masato ; Okamoto, Hiroshi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAs-AlGaAs; III-V semiconductors; Zn-diffusion induced alloying; multi-quantum-well heterostructure lasers; output power; window strip;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840265
