• DocumentCode
    991728
  • Title

    Fabrication of GaAlAs ´window-stripe´ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

  • Author

    Suzuki, Yuya ; Horikoshi, Y. ; Kobayashi, Masato ; Okamoto, Hiroshi

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    20
  • Issue
    9
  • fYear
    1984
  • Firstpage
    383
  • Lastpage
    384
  • Abstract
    By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAs-AlGaAs; III-V semiconductors; Zn-diffusion induced alloying; multi-quantum-well heterostructure lasers; output power; window strip;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840265
  • Filename
    4248709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=991728