Title :
Measurement of drift mobility and carrier density profiles in In0.53Ga0.47As long-gate JFETs
Author :
Albrecht, H. ; Lauterbach, C.
Author_Institution :
Siemens AG, Research Laboratories, Mÿnchen, West Germany
Abstract :
Measurements of the drift mobility profile and the carrier density profile in LPE-In0.53Ga0.47As channel of InGaAs/InP:Fe JFETs with a gate length of 100 ¿m are reported. Nearly flat profiles of drift mobility on channel depth with maximum values of 7500 cm2/Vs at a net carrier density of 1.5×1016 cm¿3 were realised.
Keywords :
III-V semiconductors; carrier density; carrier mobility; gallium arsenide; indium compounds; junction gate field effect transistors; In0.53Ga0.47As long gate JFET; LPE In0.53Ga0.47As channel; carrier density profile; channel depth; drain current drain source voltage characteristic; drift mobility profile; gate length 100 microns; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840273
