Parallel-to-serial transformation by using large-cell-size amorphous-silicon charge-coupled devices

An 8 bit/mm amorphous-silicon charge-coupled device of resistive gate structure and amorphous-silicon transistors has been integrated in monolithic form. The device operated at 10 kHz with a transfer efficiency of more than 99.4% per transfer. Parallel signals applied from external terminals have been transferred to cells in the charge-coupled device under the control of transistors, and have been detected as serial signals at the output terminal of the charge-coupled device.