• DocumentCode
    992007
  • Title

    Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

  • Author

    Skorupa, W ; Kreissig, U. ; Hensel, E. ; Bartsch, H.

  • Author_Institution
    Academy of Sciences of the GDR, Central Institute for Nuclear Research, Dresden, East Germany
  • Volume
    20
  • Issue
    10
  • fYear
    1984
  • Firstpage
    426
  • Lastpage
    427
  • Abstract
    Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20¿200 ¿s. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1¿2 orders of magnitude.
  • Keywords
    carrier lifetime; ion implantation; semiconductor epitaxial layers; silicon; SOI technologies; Si epitaxial layers; buried Si3N4; carrier lifetimes; crystal defects; ion implantation; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840295
  • Filename
    4248747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992007