Title :
Sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices
Author :
Kuo, J.B. ; Chen, Y.G. ; Su, K.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. Based on the study, contrary to bulk NMOS devices, for a channel width shrinking from 1 μm to 0.2 μm, the threshold voltage of mesa-isolated ultra-thin SOI NMOS devices with a 1000 /spl Aring/ thin film doped with 10/sup 17/ cm/sup -3/, decreases by 0.145 V for a front gate oxide of 100 /spl Aring/ and a sidewall oxide of 150 /spl Aring/ as a result of the sidewall edge effect.
Keywords :
MIS devices; silicon-on-insulator; 0.2 to 1 micron; mesa-isolated fully-depleted ultra-thin SOI NMOS devices; narrow channel effect; sidewall edge effect; threshold voltage; Analytical models; Councils; Electron devices; Geometry; Isolation technology; MOS devices; Oxidation; Thin film devices; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
