Degradation of insulators in Silicon Selective Epitaxial Growth (SEG) ambient

Author

Bashir, R. ; Kim, S. ; Qadri, N. ; Jin, D. ; Neudeck, G.W. ; Denton, J.P. ; Yeric, G. ; Wu, K. ; Tasch, A.

Author_Institution

Analog Process Technol. Dev., Nat. Semicond. Corp., Santa Clara, CA, USA

Volume

16

Issue

9

fYear

1995

Firstpage

382

Lastpage

384

Abstract

The degradation of various insulators in Silicon Selective Epitaxial Growth (SEG) ambient was studied. The insulators studied were thermal oxide, reoxidized nitride/oxide stack, poly-oxide, and nitrided oxide. Breakdown electric fields of MIS capacitors were measured and yields were calculated before and after the insulators were exposed to Silicon SEG ambient. It was found that the nitrided oxide was more resistant to degradation in the SEG ambient than thermal and poly oxide; results reported here for the first time. The increased resistance of nitrided oxide in SEG ambient coupled with their superior performance as thin gate insulators makes them an excellent candidate for use in novel 3-D structures using selective silicon growth.<>

Keywords

MIS capacitors; electric breakdown; elemental semiconductors; epitaxial growth; insulating thin films; semiconductor epitaxial layers; semiconductor growth; silicon; 3-D structures; MIS capacitors; Si; SiO/sub 2/; SiON; breakdown electric fields; degradation; gate insulators; nitrided oxide; poly-oxide; reoxidized nitride/oxide stack; silicon selective epitaxial growth; thermal oxide; Capacitors; Dielectrics and electrical insulation; Electric breakdown; Epitaxial growth; Hydrogen; Inductors; Oxidation; Resistance; Silicon on insulator technology; Thermal degradation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.406795

Filename

406795