• DocumentCode
    992047
  • Title

    The electrical characteristics of polysilicon oxide grown in pure N/sub 2/O

  • Author

    Lai, Chao Sung ; Lei, Tan Fu ; Lee, Chung Len

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    16
  • Issue
    9
  • fYear
    1995
  • Firstpage
    385
  • Lastpage
    386
  • Abstract
    N/sub 2/O was used to grow silicon polyoxide. It was found that the N/sub 2/O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O/sub 2/-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.<>
  • Keywords
    electric breakdown; electron traps; insulating thin films; oxidation; silicon compounds; N/sub 2/O; N/sub 2/O growth; SiO/sub 2/; breakdown field; charge-to-breakdown; electrical characteristics; electron trapping; leakage current; polysilicon oxide; silicon polyoxide; Capacitors; Chaos; Electric breakdown; Electric variables; Electron traps; Leakage current; Nonvolatile memory; Oxidation; Senior members; Stress;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.406796
  • Filename
    406796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992047