Title :
The electrical characteristics of polysilicon oxide grown in pure N/sub 2/O
Author :
Lai, Chao Sung ; Lei, Tan Fu ; Lee, Chung Len
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
N/sub 2/O was used to grow silicon polyoxide. It was found that the N/sub 2/O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O/sub 2/-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.<>
Keywords :
electric breakdown; electron traps; insulating thin films; oxidation; silicon compounds; N/sub 2/O; N/sub 2/O growth; SiO/sub 2/; breakdown field; charge-to-breakdown; electrical characteristics; electron trapping; leakage current; polysilicon oxide; silicon polyoxide; Capacitors; Chaos; Electric breakdown; Electric variables; Electron traps; Leakage current; Nonvolatile memory; Oxidation; Senior members; Stress;
Journal_Title :
Electron Device Letters, IEEE
