Title :
Annealing of Mg implants in GaAs using incoherent radiation
Author :
Blunt, R.T. ; Szweda, R. ; Lamb, M.S.M. ; Cullis, A.G.
Author_Institution :
Plessey Research (Caswell) Ltd., Towcester, UK
Abstract :
Results of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.
Keywords :
III-V semiconductors; annealing; gallium arsenide; ion implantation; semiconductor technology; GaAs; Mg implants; Si3N4 encapsulating layers; electrical activation; flash lamp annealing; incoherent light transient annealing; incoherent radiation; ion implantation; reduced outdiffusion; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840309
