Title :
InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy
Author :
Kawamura, Yuriko ; Asahi, H. ; Wakita, Ken
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
InGaAs/InGaAlAs/InAlAs/InP separate-confinement hetero-structure-multiquantum-well (SCH-MQW) laser diodes have been fabricated by molecular-beam epitaxy (MBE), and room-temperature pulsed operation at 1.57 ¿m has been achieved. This SCH-MQW laser is composed of InGaAs well layers, InGaAlAs quaternary barrier layers, and InAlAs and InP cladding layers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; semiconductor growth; semiconductor junction lasers; 1.3 to 1.6 micron region; 1.57 micron; III-V semiconductors; InAlAs cladding layers; InGaAlAs quaternary barrier layers; InGaAs well layers; InGaAs/InGaAlAs/InAlAs/InP; InP cladding layers; MBE; SCH-MQW; laser diodes; molecular-beam epitaxy; optical communication equipment; room-temperature pulsed operation; semiconductor growth; semiconductor lasers; separate-confinement heterostructure-multiquantum-well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840321
