Title :
n+ -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor
Author :
Matsumoto, Kaname ; Ogura, M. ; Wada, Tomotaka ; Hashizume, Nobuya ; Yao, Tingfeng ; Hayashi, Yasuhiro
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
The first self aligned accumulation-mode GaAs MIS-like FET having an n+ -GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FETs fabricated show the threshold voltage of almost zero (V¿th = 0.035 V) and very uniform (¿Vth = 0.013 V) characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; semiconductor-insulator-semiconductor structures; 170 mS/mm; GaAs/GaAlAs/GaAs; III-V semiconductors; MIS-like FET; SISFET; n+-type GaAs gate; self aligned accumulation mode device; semiconductor-insulator-semiconductor structure; threshold voltage; transconductance; undoped GaAlAs; undoped GaAs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840323
