DocumentCode
992343
Title
Monolithic integration of low-threshold-current 1.3 ¿m GaInAsP/InP DFB lasers
Author
Hirayama, Yuzo ; Kinoshita, J. ; Furuyama, H. ; Uematsu, Yutaka
Author_Institution
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Volume
20
Issue
11
fYear
1984
Firstpage
463
Lastpage
465
Abstract
Two 1.3 ¿m GaInAsP/InP DFB lasers with low threshold currents (28 and 29 mA) were successfully integrated. Both DFB lasers operated continuously at temperatures of up to 68°C. The 12 Å separation in wavelength between the two lasers was produced by a 2 Å difference of the grating periods. A thermal interaction between the two lasers was estimated from the shift in their wavelengths.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; multiplexing equipment; optical communication equipment; semiconductor junction lasers; 1.3 micron; 12 angstroms wavelength separation; 68°C; GaInAsP/InP DFB lasers; III-V semiconductors; WDM; continuous operation; grating period difference; integrated optics; low threshold currents; optical communication equipment; semiconductor lasers; thermal interaction; wavelength multiplexing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840324
Filename
4248783
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