• DocumentCode
    992482
  • Title

    Temperature dependence of Hall mobility and electrical conductivity in SIMOX films

  • Author

    Wyncoll, J. ; Kang, K.N. ; Cristoloveanu, S. ; Hemment, P.L.F. ; Arrowsmith, R.P.

  • Author_Institution
    ENSERG/Institut National Polytechnique de Grenoble, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, Laboratoire associé au CNRS, Grenoble, France
  • Volume
    20
  • Issue
    12
  • fYear
    1984
  • Firstpage
    485
  • Lastpage
    486
  • Abstract
    Transport data obtained on SIMOX films between 77 and 300 K are qualitatively different from those derived for bulk silicon. Results suggest a strong nonuniformity of carrier mobility: the uppermost part of the SIMOX layer is of comparable quality to bulk Si, but near the buried oxide there is a degradation, confirmed by prevailing coulombian scattering even at 300 K.
  • Keywords
    Hall effect; carrier mobility; electronic conduction in insulating thin films; ion implantation; semiconductor-insulator boundaries; 77K to 300K; Coulombian scattering; Hall mobility; SIMOX films; SOI technology; carrier mobility; electrical conductivity; nonuniformity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840337
  • Filename
    4248800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992482