Title :
Temperature dependence of Hall mobility and electrical conductivity in SIMOX films
Author :
Wyncoll, J. ; Kang, K.N. ; Cristoloveanu, S. ; Hemment, P.L.F. ; Arrowsmith, R.P.
Author_Institution :
ENSERG/Institut National Polytechnique de Grenoble, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, Laboratoire associé au CNRS, Grenoble, France
Abstract :
Transport data obtained on SIMOX films between 77 and 300 K are qualitatively different from those derived for bulk silicon. Results suggest a strong nonuniformity of carrier mobility: the uppermost part of the SIMOX layer is of comparable quality to bulk Si, but near the buried oxide there is a degradation, confirmed by prevailing coulombian scattering even at 300 K.
Keywords :
Hall effect; carrier mobility; electronic conduction in insulating thin films; ion implantation; semiconductor-insulator boundaries; 77K to 300K; Coulombian scattering; Hall mobility; SIMOX films; SOI technology; carrier mobility; electrical conductivity; nonuniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840337
