Title :
GaP/phthalocyanine Langmuir-Blodgett film electroluminescent diode
Author :
Batey, J. ; Petty, Michael C. ; Roberts, G.G. ; Wight, D.R.
Author_Institution :
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Abstract :
The electrical and electroluminescent properties of Au/phthalocyanine Langmuir-Blodgett film/GaP diodes are reported. The electroluminescence conversion efficiency is shown to depend on the number of Langmuir-Blodgett layers and is a maximum for a 5.6 nm-thick film. This optimum can be explained in terms of simple tunnel injection theory. A preliminary investigation reveals that the devices are relatively stable and that the maximum power conversion efficiency approaches that of an unencapsulated p-n junction diode.
Keywords :
III-V semiconductors; Langmuir films; gallium compounds; light emitting diodes; Au/phthalocyanine Langmuir-Blodgett film/GaP diodes; III-V semiconductors; conversion efficiency; electroluminescent diode; electroluminescent properties; maximum power conversion efficiency; tunnel injection theory;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840340
