DocumentCode
992511
Title
GaP/phthalocyanine Langmuir-Blodgett film electroluminescent diode
Author
Batey, J. ; Petty, Michael C. ; Roberts, G.G. ; Wight, D.R.
Author_Institution
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Volume
20
Issue
12
fYear
1984
Firstpage
489
Lastpage
491
Abstract
The electrical and electroluminescent properties of Au/phthalocyanine Langmuir-Blodgett film/GaP diodes are reported. The electroluminescence conversion efficiency is shown to depend on the number of Langmuir-Blodgett layers and is a maximum for a 5.6 nm-thick film. This optimum can be explained in terms of simple tunnel injection theory. A preliminary investigation reveals that the devices are relatively stable and that the maximum power conversion efficiency approaches that of an unencapsulated p-n junction diode.
Keywords
III-V semiconductors; Langmuir films; gallium compounds; light emitting diodes; Au/phthalocyanine Langmuir-Blodgett film/GaP diodes; III-V semiconductors; conversion efficiency; electroluminescent diode; electroluminescent properties; maximum power conversion efficiency; tunnel injection theory;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840340
Filename
4248804
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