Title :
A CPD image sensor with an SOI structure
Author :
Fujii, Eiji ; Senda, Kohji ; Emoto, Fumiaki ; Horoshima, Y.
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
fDate :
5/1/1988 12:00:00 AM
Abstract :
A CPD image sensor with an SOI (silicon-on-insulator) structure has been developed. The sensor is composed of read-out transistors fabricated on laser-recrystallized silicon, photodiodes on the seeding region, an MOS shift register, and a CCD shift register. A reproduced image with a 50 (H)×60 (V) pixel image sensor showed reduction of smear noise to a value 1/8000 times that in the bulk transistor as a result of complete isolation of the drains of the read-out transistors by oxide layers
Keywords :
CCD image sensors; semiconductor-insulator boundaries; 3000 pixel; 50 pixel; 60 pixel; CCD shift register; CPD image sensor; MOS shift register; SOI structure; charge primary device; laser recrystallisation; oxide isolation; photodiodes; read-out transistors; reproduced image; seeding region; smear noise reduction; Charge coupled devices; Circuit noise; Image sensors; Laser noise; MOSFETs; Optical device fabrication; Photodiodes; Pixel; Shift registers; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
