Silicon-on-insulator CMOS transistors in dual electron beam recrystallised polysilicon

Discrete MOS transistors and CMOS test circuits have been fabricated on silicon-on-insulator substrates prepared by recrystallisation of polysilicon on silicon dioxide by the dual electron beam technique. Channel mobilities in seeded material are found to be equal to those obtained in bulk silicon devices. In unseeded material hole mobility remains the same, but electron mobility is lower.