• DocumentCode
    992630
  • Title

    Cryogenic GaAs FET amplifier

  • Author

    Withington, S.

  • Author_Institution
    University of Cambridge, Mullard Radio Astronomy Observatory, Cavendish Laboratory, Cambridge, UK
  • Volume
    20
  • Issue
    12
  • fYear
    1984
  • Firstpage
    506
  • Lastpage
    508
  • Abstract
    An extremely low noise, cryogenic, gallium arsenide field-effect-transistor amplifier has been developed for the frequency range 3.7 to 4.2 GHz. The amplifier has an average noise temperature of 25 K, with an associated gain of 21 dB, when cooled to a physical temperature of 77 K.
  • Keywords
    III-V semiconductors; cryogenics; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 21 dB gain; 25K noise temperature; 3.7 to 4.2 GHz; 77K; FET amplifier; GaAs; III-V semiconductors; SHF; cryogenic type; solid-state microwave circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840352
  • Filename
    4248817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992630