Title :
Lateral resurfed COMFET
Author :
Darwish, M. ; Board, K.
Author_Institution :
University College of Swansea, Department of Electrical & Electronic Engineering, Swansea, UK
Abstract :
A lateral resurfed COMFET structure is proposed. The conductivity of the drift region of the device is modulated as in the case of vertical COMFET. However, the maximum operating current and switching speed are expected to be several times that of the vertical structure because of the collection of excess minority carriers by the p¿-substrate and the narrow width of the n¿ epitaxial layer.
Keywords :
insulated gate field effect transistors; power transistors; IGFET; excess minority carriers; higher latching current; lateral resurfed COMFET structure; lower turnoff time; maximum operating current; n- epitaxial layer; p--substrate; power transistors; switching speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840360
