• DocumentCode
    992759
  • Title

    Improvement of crystalline quality of the surface layer in buried implanted oxide structures by silicon implantation

  • Author

    Das, K. ; McClelland, S. ; Butcher, J.B.

  • Author_Institution
    Middlesex Polytechnic, Microelectronics Centre, London, UK
  • Volume
    20
  • Issue
    13
  • fYear
    1984
  • Firstpage
    526
  • Lastpage
    527
  • Abstract
    An improvement of the crystalline quality of the surface layer in buried implanted oxide structures in silicon has been achieved by silicon in implantation and subsequent 570°C anneal treatment.
  • Keywords
    elemental semiconductors; ion implantation; semiconductor technology; silicon; SOI; Si implantation; anneal treatment; buried implanted oxide structures; crystalline quality improvement; ion implantation; surface layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840365
  • Filename
    4248832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992759