• DocumentCode
    992789
  • Title

    Nonabsorbing-mirror (NAM) CDH-LOC diode lasers

  • Author

    Botez, D. ; Connolly, J.C.

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    20
  • Issue
    13
  • fYear
    1984
  • Firstpage
    530
  • Lastpage
    532
  • Abstract
    CDH-LOC lasers with lateral and transverse mode control in nonabsorbing mirror regions are realised by a single etch-and-regrowth cycle. The maximum achieved peak-pulsed output power (100 ns) and catastrophic-optical-damage (power-density) levels are 1.5 W and (20¿30) MW/cm2, respectively. A linear power density of 200 mW/¿m is reached at catastrophic damage. Fundamental-mode operation is obtained to 80 mW in narrow beams (¿¿¿7°; ¿¿¿15°).
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; CDH-LOC diode lasers; NAM; catastrophic-optical-damage power-density levels; constricted double heterojunction lasers; fundamental mode operation; large optical cavity; lateral mode control; linear power density; narrow beams; nonabsorbing mirror; peak-pulsed output power; semiconductor lasers; single etch regrowth cycle; transverse mode control;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840368
  • Filename
    4248835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992789