Title :
Robust PIN photodiode with a guard ring protection structure
Author :
Sun, Maoyou ; Xie, Kezhou ; Lu, Yicheng
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers State Univ. of New Jersey, Piscataway, NJ, USA
fDate :
6/1/2004 12:00:00 AM
Abstract :
A guard ring (GR) structure is used to protect a planar InGaAs pin photodiode. The human body model (HBM) measurement results show that a photodiode with a GR, which is shorted to the cathode, is able to withstand an electrostatic discharge (ESD) threshold voltage of up to 200 V, whereas a similar photodiode without a GR structure can only withstand 50 V ESD threshold voltage. The capacitance and bandwidth measurement results show that the GR has negligible negative effects on the pin diode performance.
Keywords :
III-V semiconductors; capacitance measurement; electrostatic discharge; gallium arsenide; indium compounds; p-i-n photodiodes; physiological models; semiconductor device reliability; 200 V; 50 V; InGaAs; bandwidth measurement; capacitance measurement; electrostatic discharge; guard ring protection; human body model; optical communication; robust PIN photodiode; Biological system modeling; Cathodes; Electrostatic discharge; Electrostatic measurements; Humans; Indium gallium arsenide; PIN photodiodes; Protection; Robustness; Threshold voltage; ESD; Electrostatic discharge; GR; HBM; InGaAs; guard ring; human body model; optical communication; photodiode;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.827374
